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PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE680M03
FEATURES
* NEW M03 PACKAGE: * Smallest transistor outline package available * Low profile/0.59 mm package height * Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE: NF = 1.9 dB at 2 GHz
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
1.20.05 0.80.1 2
* *
TH
1.4 0.1 0.45 (0.9) 0.45 1 0.20.1
0.30.1 3
DESCRIPTION
The NE680M03 transistor is designed for low noise, high gain, and low cost applications. This high fT part is ideal for low voltage/low current applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE680 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles.
0.590.05 +0.1 0.15 -0.05
Note: 1. This dimension was changed effective 04/2000 from 1.4 mm to 1.2 mm. Products with "04" or a higher number indicated for month of manufacture in lot numbers have the new dimension.
PIN CONNECTIONS 1. Emitter 2. Base 3. Collector
Example of Lot No. Identification
0 6 xxxxxxx
In-company control code Month of manufacture (Example: Jan. = 1, Feb. = 2, etc. Oct. = X, Nov. = Y, Dec. = Z) Year of manufacture (Last digit of year, 2000 = 0)
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 5 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 6 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz Forward Current Gain at VCE = 3 V, IC = 5 mA Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz A A pF 0.3 UNITS GHz dB dB 5.5 80 MIN 5.5 NE680M03 2SC5434 M03 TYP 8.0 1.9 7.5 145 1.0 1.0 0.7 3.2 MAX
California Eastern Laboratories
NE680M03
NONLINEAR MODEL
SCHEMATIC
CCBPKG CCB LCX LBX Base LB CCE Collector
Q1
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 5.98e-16 179 1.04 17 0.02 1.0e-6 30 16 1.04 100 6.85e-3 1.5e-9 20 0.50 8.54 2 4e-4 10 0.358e-12 0.86 0.5 0.162e-12 0.52 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.15 1 0 0.75 0 0.5 8.7e-12 20 0.3 0.04 120 0.635e-9 1.11 0 3 0 1
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
ADDITIONAL PARAMETERS
Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 680M03 0.08e-12 0.08e-12 0.4e-9 0.8e-9 0.08e-12 0.08e-12 0.12e-9 0.10e-9 0.12e-9
MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 0.5 V to 6 V, IC = 0.5 mA to 15 mA Date: 11/98
(1) Gummel-Poon Model
NE680M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 20 10 1.5 35 125 150 -65 to +150
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25C)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
35
FORWARD CURRENT GAIN vs. COLECTOR CURRENT
500 VCE = 6 V 300 200
25
DC Forward Current Gain, hFE
2 4 6 8 10
Collector Current, IC (mA)
100 70 50 30 20
15
5
10
0
1
2
3
5
7
10
20
30
50
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 06/10/2002

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